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氮化鎵(jia)（GaN）外延片
潤(run)新微電子(zi)提供具(ju)有更高性價比、穩定(ding)可靠的氮化鎵產品，致力于推動電能轉換革命！
■ 控制生長條件(jian)實現優(you)異的二維(wei)電子氣(qi)
■ 利用特有的緩沖層生長技術實(shi)現(xian)高(gao)擊穿電壓和極(ji)低漏(lou)電流
■ 原(yuan)位氮化硅沉積提(ti)(ti)供(gong)了優良的動態性能，提(ti)(ti)高器件可靠性
■ 控制生長條件(jian)實(shi)現的高均勻性和(he)重復(fu)性
Key Features:
● High Vertical Breakdown Voltage: >1000V
● Low Leakage Current @Sub. Ground：<0.1uA/mm2@600V
● Bow X/Y: +/-45um
Typical Applications：
● 650V HEMTs
● 650V Diodes
| Parameters | Measurements |
| Substrate | 6” 1mm <111> p-type Si |
| Epi ThickAvg | ~5um |
| Epi ThickUnif | <2% |
| Bow | +/-45um |
| Cracking | <5mm |
| Vertical BV | >1000V |
| HEMT Al% | 25-35% |
| HEMT ThickAvg | 20-30nm |
| Insitu SiN Cap | 5-60nm |
| 2DEG conc. | ~1013cm-2 |
| Mobility | ~2000cm2/Vs (<2%) |
| Rsh | <330ohm/sq (<2%) |
400-6988-056
